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IKZA75N65SS5XKSA1
Infineon
IKW75N65SS5 Series 650 V 80 A 395 W Through Hole IGBT Transistor - PG-TO-247-4-3
RoHSCompliant
- Manufacturer
- Infineon
- Height
- 25.27mm
- Power Dissipation
- 395W
- Turn On Delay Time
- 22ns
- Turn Off Delay Time
- 145ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -40°C
- Continuous Collector Current
- 80A
- Max Junction Temperature (Tj)
- 175°C
- Collector Emitter Voltage (VCEO)
- 650V
- Collector Emitter Breakdown Voltage
- 650V
- Collector Emitter Saturation Voltage
- 1.35V