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IPA60R190E6XKSA1
Infineon · TO-220 · NRND
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
LifecycleNRNDRoHSCompliant
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-220
- Standard packaging qty
- 500
- Fall Time
- 8ns
- Lead Free
- Lead Free
- Rise Time
- 10ns
- Rds On Max
- 190mO
- Schedule B
- 8541290080
- Halogen Free
- Halogen Free
- Number of Pins
- 3
- Contact Plating
- Tin
- Input Capacitance
- 1.4nF
- Power Dissipation
- 34W
- Turn On Delay Time
- 12ns
- On State Resistance
- 190mO
Show 10 more specificationsShow fewer specifications
- Turn Off Delay Time
- 90ns
- Element Configuration
- Single
- Max Power Dissipation
- 34W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 190mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 20.2A
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 650V
Common questions about IPA60R190E6XKSA1
- What is IPA60R190E6XKSA1?
- IPA60R190E6XKSA1 is Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, manufactured by Infineon.
- Who manufactures IPA60R190E6XKSA1?
- IPA60R190E6XKSA1 is manufactured by Infineon.
- What package does IPA60R190E6XKSA1 come in?
- IPA60R190E6XKSA1 comes in a TO-220 package.
- Is IPA60R190E6XKSA1 RoHS compliant?
- The RoHS status of IPA60R190E6XKSA1 is: Compliant.
- Is IPA60R190E6XKSA1 still in production?
- IPA60R190E6XKSA1 has a lifecycle status of NRND.
- Where can I buy IPA60R190E6XKSA1?
- Send an RFQ to Makat and our AI agents source IPA60R190E6XKSA1 across the whole supplier network, with verified offers inside 48 hours.