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IPB048N15N5LFATMA1
Infineon · Active
MOSFET, N-CH, 150V, 120A, 150DEG C, 313W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.1V RoHS Compliant: Ye
LifecycleActiveRoHSNon-Compliant
- Manufacturer
- Infineon
- Packaging
- Tape & Reel
- Standard packaging qty
- 1
- Height
- 4.82mm
- Schedule B
- 8541290080
- Power Dissipation
- 313W
- Number of Channels
- 1
- Turn On Delay Time
- 8ns
- Turn Off Delay Time
- 42ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 3.9mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 18A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 150V