IPD038N06N3GATMA1

Infineon · TO-252 · Active

POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 60V, 0.0038OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA

LifecycleActiveRoHSCompliant

Manufacturer: Infineon
Package / case: TO-252
Mounting style: Surface Mount
Packaging: Tape & Reel
Standard packaging qty: 2
Fall Time: 5ns
Lead Free: Contains Lead
Rise Time: 70ns
Rds On Max: 3.8mO
Schedule B: 8541290080
Halogen Free: Halogen Free
Number of Pins: 3
Input Capacitance: 8nF
Power Dissipation: 188W
Turn On Delay Time: 30ns
On State Resistance: 3.8mO