IPD135N08N3GATMA1

Infineon · Active

Power Field-Effect Transistor, 45A I(D), 80V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

LifecycleActiveRoHSNon-Compliant

Manufacturer: Infineon
Packaging: Tape & Reel
Standard packaging qty: 2
Lead Free: Contains Lead
Schedule B: 8541290080
Halogen Free: Halogen Free
Input Capacitance: 1.3nF
Power Dissipation: 79W
On State Resistance: 13.5mO
Max Dual Supply Voltage: 80V
Max Operating Temperature: 175°C
Min Operating Temperature: -55°C
Drain to Source Resistance: 11.4mO
Drain to Source Voltage (Vdss): 80V