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IPD33CN10NGATMA1

Infineon · TO-252 · Active

Single N-Channel 100 V 33 mOhm 18 nC OptiMOS™ Power Mosfet - TO-252-3

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LifecycleActiveRoHSCompliant
Manufacturer
Infineon
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-252
Mounting style
Surface Mount
Packaging
Tape & Reel
Standard packaging qty
2
Fall Time
4ns
Lead Free
Contains Lead
Rise Time
21ns
Rds On Max
33mO
Schedule B
8541290080
Halogen Free
Halogen Free
Number of Pins
3
Input Capacitance
1.18nF
Power Dissipation
58W
Turn On Delay Time
11ns
Show 10 more specifications
On State Resistance
33mO
Turn Off Delay Time
17ns
Max Power Dissipation
58W
Max Dual Supply Voltage
100V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Drain to Source Resistance
25mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
27A
Drain to Source Voltage (Vdss)
100V

Common questions about IPD33CN10NGATMA1

What is IPD33CN10NGATMA1?
IPD33CN10NGATMA1 is Single N-Channel 100 V 33 mOhm 18 nC OptiMOS™ Power Mosfet - TO-252-3, manufactured by Infineon.
Who manufactures IPD33CN10NGATMA1?
IPD33CN10NGATMA1 is manufactured by Infineon.
What package does IPD33CN10NGATMA1 come in?
IPD33CN10NGATMA1 comes in a TO-252 package (Surface Mount).
Is IPD33CN10NGATMA1 RoHS compliant?
The RoHS status of IPD33CN10NGATMA1 is: Compliant.
Is IPD33CN10NGATMA1 still in production?
IPD33CN10NGATMA1 has a lifecycle status of Active.
Where can I buy IPD33CN10NGATMA1?
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