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IPD50N06S2L13ATMA2

Infineon · TO-252 · Active

Power Field-Effect Transistor, 50A I(D), 55V, 0.0167ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

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LifecycleActiveRoHSCompliant
Manufacturer
Infineon
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-252
Mounting style
Surface Mount
Packaging
Tape & Reel
Standard packaging qty
2
Temperature
- 55 C – + 175 C
Rds On Max
12.7mO
Number of Pins
3
Input Capacitance
1.8nF
Power Dissipation
136W
On State Resistance
12.7mO
Max Power Dissipation
136W
Max Dual Supply Voltage
55V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Show 2 more specifications
Continuous Drain Current (ID)
50A
Drain to Source Voltage (Vdss)
55V

Common questions about IPD50N06S2L13ATMA2

What is IPD50N06S2L13ATMA2?
IPD50N06S2L13ATMA2 is Power Field-Effect Transistor, 50A I(D), 55V, 0.0167ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, manufactured by Infineon.
Who manufactures IPD50N06S2L13ATMA2?
IPD50N06S2L13ATMA2 is manufactured by Infineon.
What package does IPD50N06S2L13ATMA2 come in?
IPD50N06S2L13ATMA2 comes in a TO-252 package (Surface Mount).
Is IPD50N06S2L13ATMA2 RoHS compliant?
The RoHS status of IPD50N06S2L13ATMA2 is: Compliant.
Is IPD50N06S2L13ATMA2 still in production?
IPD50N06S2L13ATMA2 has a lifecycle status of Active.
Where can I buy IPD50N06S2L13ATMA2?
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