CatalogSend an RFQ
IPD65R1K0CEAUMA1
Infineon · TO-252 · Active
OSFET, N-CH, 650V, 7.2A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.86ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 68W;
LifecycleActiveRoHSCompliant
- Manufacturer
- Infineon
- Package / case
- TO-252
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Standard packaging qty
- 2
- Lead Free
- Contains Lead
- Halogen Free
- Halogen Free
- Power Dissipation
- 68W
- Max Power Dissipation
- 68W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 860mO