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Catalog

IPD65R1K0CEAUMA1

Infineon · TO-252 · Active

OSFET, N-CH, 650V, 7.2A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.2A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.86ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 68W;

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LifecycleActiveRoHSCompliant
Manufacturer
Infineon
Package / case
TO-252
Mounting style
Surface Mount
Packaging
Tape & Reel
Standard packaging qty
2
Lead Free
Contains Lead
Halogen Free
Halogen Free
Power Dissipation
68W
Max Power Dissipation
68W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
860mO

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