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IPD80R2K4P7ATMA1
Infineon · Active
Power Field-Effect Transistor, 2.5A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
LifecycleActiveRoHSNon-Compliant
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Packaging
- Tape & Reel
- Standard packaging qty
- 2
- Power Dissipation
- 22W
- On State Resistance
- 2.4O
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 2O
- Drain to Source Voltage (Vdss)
- 800V
Common questions about IPD80R2K4P7ATMA1
- What is IPD80R2K4P7ATMA1?
- IPD80R2K4P7ATMA1 is Power Field-Effect Transistor, 2.5A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, manufactured by Infineon.
- Who manufactures IPD80R2K4P7ATMA1?
- IPD80R2K4P7ATMA1 is manufactured by Infineon.
- Is IPD80R2K4P7ATMA1 RoHS compliant?
- The RoHS status of IPD80R2K4P7ATMA1 is: Non-Compliant.
- Is IPD80R2K4P7ATMA1 still in production?
- IPD80R2K4P7ATMA1 has a lifecycle status of Active.
- Where can I buy IPD80R2K4P7ATMA1?
- Send an RFQ to Makat and our AI agents source IPD80R2K4P7ATMA1 across the whole supplier network, with verified offers inside 48 hours.