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IPP60R070CFD7XKSA1
Infineon · Active
MOSFET, N-CH, 600V, 31A, 150DEG C, 156W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
LifecycleActiveRoHSNon-Compliant
- Manufacturer
- Infineon
- Standard packaging qty
- 500
- Height
- 20.7mm
- Input Capacitance
- 2.721nF
- Power Dissipation
- 156W
- Number of Channels
- 1
- Turn On Delay Time
- 26ns
- On State Resistance
- 70mO
- Turn Off Delay Time
- 99ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 57mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 31A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 600V