IPU80R3K3P7AKMA1

Infineon · Active

MOSFET, N-CH, 800V, 1.9A, TO-251; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa

LifecycleActiveRoHSNon-Compliant

Manufacturer: Infineon
Standard packaging qty: 1
Power Dissipation: 18W
On State Resistance: 3.3O
Max Operating Temperature: 150°C
Min Operating Temperature: -55°C
Drain to Source Resistance: 2.8O
Drain to Source Voltage (Vdss): 800V