CatalogSend an RFQ
IRF100P218AKMA1
Infineon · Active
MOSFET, N-CH, 100V, 462A, 175DEG C, 556W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:462A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold V
LifecycleActiveRoHSNon-Compliant
- Manufacturer
- Infineon
- Standard packaging qty
- 400
- Height
- 24.99mm
- Power Dissipation
- 3.8W
- Number of Channels
- 1
- Turn On Delay Time
- 50ns
- Turn Off Delay Time
- 170ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 1.1mO
- Max Junction Temperature (Tj)
- 175°C