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KHBBC4B03C-MC1KT00

Samsung Electro-Mechanics · Active

36GB High Bandwidth Memory (HBM3E) DRAM chip featuring a 12-layer stack structure, 9.2 Gbps per pin transmission speed, and a 1024-bit memory bus organization, packaged in a compact MPGA format.

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LifecycleActiveRoHSCompliantECCN3A090.cHTSUS8542.32.00
Manufacturer
Samsung Electro-Mechanics
Product series
HBM3E
Classification
Active
Categories
Memory · Other
Packaging
Tray

Common questions about KHBBC4B03C-MC1KT00

What is KHBBC4B03C-MC1KT00?
KHBBC4B03C-MC1KT00 is 36GB High Bandwidth Memory (HBM3E) DRAM chip featuring a 12-layer stack structure, 9.2 Gbps per pin transmission speed, and a 1024-bit memory bus organization, packaged in a compact MPGA format., manufactured by Samsung Electro-Mechanics.
Who manufactures KHBBC4B03C-MC1KT00?
KHBBC4B03C-MC1KT00 is manufactured by Samsung Electro-Mechanics.
Is KHBBC4B03C-MC1KT00 RoHS compliant?
The RoHS status of KHBBC4B03C-MC1KT00 is: Compliant.
Is KHBBC4B03C-MC1KT00 still in production?
KHBBC4B03C-MC1KT00 has a lifecycle status of Active.
Where can I buy KHBBC4B03C-MC1KT00?
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