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MRF6S20010GNR1

NXP Semiconductors · TO-270

GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2

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RoHSCompliant
Manufacturer
NXP Semiconductors
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-270
Mounting style
Surface Mount
Packaging
Tape & Reel
Weight
547.996282mg
Lead Free
Contains Lead
Current Rating
10µA
Number of Pins
3
Number of Elements
1
Voltage Rating (DC)
28V
Element Configuration
Single
Max Operating Temperature
225°C
Min Operating Temperature
-65°C
Gate to Source Voltage (Vgs)
12V
Drain to Source Voltage (Vdss)
68V
Show 1 more specification
Drain to Source Breakdown Voltage
68V

Common questions about MRF6S20010GNR1

What is MRF6S20010GNR1?
MRF6S20010GNR1 is GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V, FM2, manufactured by NXP Semiconductors.
Who manufactures MRF6S20010GNR1?
MRF6S20010GNR1 is manufactured by NXP Semiconductors.
What package does MRF6S20010GNR1 come in?
MRF6S20010GNR1 comes in a TO-270 package (Surface Mount).
Is MRF6S20010GNR1 RoHS compliant?
The RoHS status of MRF6S20010GNR1 is: Compliant.
Where can I buy MRF6S20010GNR1?
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