MRF8P29300HR6

NXP Semiconductors · NI-1230

F Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1787

RoHSCompliant

Manufacturer: NXP Semiconductors
Package / case: NI-1230
Mounting style: Screw, Surface Mount
Packaging: Tape & Reel
Weight: 13.192592g
Halogen Free: Halogen Free
Number of Pins: 4
Number of Elements: 2
Element Configuration: Dual
Max Operating Temperature: 150°C
Min Operating Temperature: -65°C
Gate to Source Voltage (Vgs): 10V
Drain to Source Voltage (Vdss): 65V
Drain to Source Breakdown Voltage: 65V