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MRF8S9120NR3

NXP Semiconductors

RF Power Transistor,865 to 960 MHz, 120 W, Typ Gain in dB is 19.8 @ 960 MHz, 28 V, LDMOS, SOT1823

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RoHSCompliant
Manufacturer
NXP Semiconductors
Categories
Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
Mounting style
Surface Mount
Weight
3.081111g
Halogen Free
Not Halogen Free
Number of Pins
3
Number of Elements
1
Radiation Hardening
No
Element Configuration
Single
Max Operating Temperature
225°C
Min Operating Temperature
-30°C
Gate to Source Voltage (Vgs)
10V
Drain to Source Voltage (Vdss)
70V
Drain to Source Breakdown Voltage
70V

Common questions about MRF8S9120NR3

What is MRF8S9120NR3?
MRF8S9120NR3 is RF Power Transistor,865 to 960 MHz, 120 W, Typ Gain in dB is 19.8 @ 960 MHz, 28 V, LDMOS, SOT1823, manufactured by NXP Semiconductors.
Who manufactures MRF8S9120NR3?
MRF8S9120NR3 is manufactured by NXP Semiconductors.
Is MRF8S9120NR3 RoHS compliant?
The RoHS status of MRF8S9120NR3 is: Compliant.
Where can I buy MRF8S9120NR3?
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