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MRF8S9120NR3
NXP Semiconductors
RF Power Transistor,865 to 960 MHz, 120 W, Typ Gain in dB is 19.8 @ 960 MHz, 28 V, LDMOS, SOT1823
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
- Mounting style
- Surface Mount
- Weight
- 3.081111g
- Halogen Free
- Not Halogen Free
- Number of Pins
- 3
- Number of Elements
- 1
- Radiation Hardening
- No
- Element Configuration
- Single
- Max Operating Temperature
- 225°C
- Min Operating Temperature
- -30°C
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 70V
- Drain to Source Breakdown Voltage
- 70V
Common questions about MRF8S9120NR3
- What is MRF8S9120NR3?
- MRF8S9120NR3 is RF Power Transistor,865 to 960 MHz, 120 W, Typ Gain in dB is 19.8 @ 960 MHz, 28 V, LDMOS, SOT1823, manufactured by NXP Semiconductors.
- Who manufactures MRF8S9120NR3?
- MRF8S9120NR3 is manufactured by NXP Semiconductors.
- Is MRF8S9120NR3 RoHS compliant?
- The RoHS status of MRF8S9120NR3 is: Compliant.
- Where can I buy MRF8S9120NR3?
- Send an RFQ to Makat and our AI agents source MRF8S9120NR3 across the whole supplier network, with verified offers inside 48 hours.