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MRF8S9200NR3
NXP Semiconductors
RF Power Transistor,920 to 960 MHz, 200 W, Typ Gain in dB is 19.9 @ 940 MHz, 28 V, LDMOS, SOT1823
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Weight
- 3.081111g
- Halogen Free
- Halogen Free
- Number of Pins
- 3
- Number of Elements
- 1
- Radiation Hardening
- No
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -65°C
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 70V