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MRFE6VP5600HR5
NXP Semiconductors
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V, CFM4F, RoHS
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Mounting style
- Screw, Surface Mount
- Weight
- 13.155199g
- Number of Pins
- 5
- Contact Plating
- Gold
- Number of Elements
- 2
- Radiation Hardening
- No
- Max Power Dissipation
- 1.667kW
- Max Operating Temperature
- 225°C
- Min Operating Temperature
- -65°C
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 130V