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MRFE6VP61K25HR5

NXP Semiconductors

RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787

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RoHSCompliant
Manufacturer
NXP Semiconductors
Categories
Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
Mounting style
Screw, Surface Mount
Weight
13.155199g
Lead Free
Lead Free
REACH SVHC
No
Schedule B
8541290080
Halogen Free
Halogen Free
Number of Pins
5
Contact Plating
Gold
Number of Elements
2
Radiation Hardening
No
Max Power Dissipation
1.333kW
Max Operating Temperature
225°C
Min Operating Temperature
-55°C
Gate to Source Voltage (Vgs)
10V
Show 2 more specifications
Continuous Drain Current (ID)
10µA
Drain to Source Voltage (Vdss)
133V

Common questions about MRFE6VP61K25HR5

What is MRFE6VP61K25HR5?
MRFE6VP61K25HR5 is RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787, manufactured by NXP Semiconductors.
Who manufactures MRFE6VP61K25HR5?
MRFE6VP61K25HR5 is manufactured by NXP Semiconductors.
Is MRFE6VP61K25HR5 RoHS compliant?
The RoHS status of MRFE6VP61K25HR5 is: Compliant.
Where can I buy MRFE6VP61K25HR5?
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