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MRFE6VP61K25HR5
NXP Semiconductors
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
- Mounting style
- Screw, Surface Mount
- Weight
- 13.155199g
- Lead Free
- Lead Free
- REACH SVHC
- No
- Schedule B
- 8541290080
- Halogen Free
- Halogen Free
- Number of Pins
- 5
- Contact Plating
- Gold
- Number of Elements
- 2
- Radiation Hardening
- No
- Max Power Dissipation
- 1.333kW
- Max Operating Temperature
- 225°C
- Min Operating Temperature
- -55°C
- Gate to Source Voltage (Vgs)
- 10V
Show 2 more specificationsShow fewer specifications
- Continuous Drain Current (ID)
- 10µA
- Drain to Source Voltage (Vdss)
- 133V
Common questions about MRFE6VP61K25HR5
- What is MRFE6VP61K25HR5?
- MRFE6VP61K25HR5 is RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787, manufactured by NXP Semiconductors.
- Who manufactures MRFE6VP61K25HR5?
- MRFE6VP61K25HR5 is manufactured by NXP Semiconductors.
- Is MRFE6VP61K25HR5 RoHS compliant?
- The RoHS status of MRFE6VP61K25HR5 is: Compliant.
- Where can I buy MRFE6VP61K25HR5?
- Send an RFQ to Makat and our AI agents source MRFE6VP61K25HR5 across the whole supplier network, with verified offers inside 48 hours.