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MRFE6VP6300HR5
NXP Semiconductors
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Screw, Surface Mount
- Height
- 4.32mm
- Weight
- 6.395794g
- Schedule B
- 8541290080
- Contact Plating
- Gold
- Power Dissipation
- 1.05kW
- Number of Channels
- 1
- Number of Elements
- 2
- Radiation Hardening
- No
- Max Power Dissipation
- 1.05kW
- Max Operating Temperature
- 225°C
- Min Operating Temperature
- -65°C
- Gate to Source Voltage (Vgs)
- 10V
- Continuous Drain Current (ID)
- 100mA
Show 3 more specificationsShow fewer specifications
- Max Junction Temperature (Tj)
- 225°C
- Drain to Source Voltage (Vdss)
- 130V
- Drain to Source Breakdown Voltage
- 130V
Common questions about MRFE6VP6300HR5
- What is MRFE6VP6300HR5?
- MRFE6VP6300HR5 is Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS, manufactured by NXP Semiconductors.
- Who manufactures MRFE6VP6300HR5?
- MRFE6VP6300HR5 is manufactured by NXP Semiconductors.
- Is MRFE6VP6300HR5 RoHS compliant?
- The RoHS status of MRFE6VP6300HR5 is: Compliant.
- Where can I buy MRFE6VP6300HR5?
- Send an RFQ to Makat and our AI agents source MRFE6VP6300HR5 across the whole supplier network, with verified offers inside 48 hours.