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MRFE6VP6300HR5

NXP Semiconductors

Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS

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RoHSCompliant
Manufacturer
NXP Semiconductors
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Mounting style
Screw, Surface Mount
Height
4.32mm
Weight
6.395794g
Schedule B
8541290080
Contact Plating
Gold
Power Dissipation
1.05kW
Number of Channels
1
Number of Elements
2
Radiation Hardening
No
Max Power Dissipation
1.05kW
Max Operating Temperature
225°C
Min Operating Temperature
-65°C
Gate to Source Voltage (Vgs)
10V
Continuous Drain Current (ID)
100mA
Show 3 more specifications
Max Junction Temperature (Tj)
225°C
Drain to Source Voltage (Vdss)
130V
Drain to Source Breakdown Voltage
130V

Common questions about MRFE6VP6300HR5

What is MRFE6VP6300HR5?
MRFE6VP6300HR5 is Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS, manufactured by NXP Semiconductors.
Who manufactures MRFE6VP6300HR5?
MRFE6VP6300HR5 is manufactured by NXP Semiconductors.
Is MRFE6VP6300HR5 RoHS compliant?
The RoHS status of MRFE6VP6300HR5 is: Compliant.
Where can I buy MRFE6VP6300HR5?
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