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MUN5216DW1T1G

onsemi · SOT-363 · Active

Dual NPN Bipolar Digital Transistor (BRT)

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LifecycleActiveRoHSCompliant
Manufacturer
onsemi
Categories
Semiconductors · Discrete Semiconductors · Transistors · BJTs
Package / case
SOT-363
Packaging
Tape & Reel
HFE Min
160
Polarity
NPN
Lead Free
Lead Free
Schedule B
8541210080
Halogen Free
Halogen Free
Current Rating
100mA
Number of Pins
6
Contact Plating
Tin
Power Dissipation
187mW
Max Output Current
100mA
Radiation Hardening
No
Voltage Rating (DC)
50V
Show 11 more specifications
Element Configuration
Dual
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
250mW
Operating Supply Voltage
50V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Continuous Collector Current
100mA
Manufacturer Lifecycle Status
Production
Collector Emitter Voltage (VCEO)
50V
Collector Emitter Breakdown Voltage
50V

Common questions about MUN5216DW1T1G

What is MUN5216DW1T1G?
MUN5216DW1T1G is Dual NPN Bipolar Digital Transistor (BRT), manufactured by onsemi.
Who manufactures MUN5216DW1T1G?
MUN5216DW1T1G is manufactured by onsemi.
What package does MUN5216DW1T1G come in?
MUN5216DW1T1G comes in a SOT-363 package.
Is MUN5216DW1T1G RoHS compliant?
The RoHS status of MUN5216DW1T1G is: Compliant.
Is MUN5216DW1T1G still in production?
MUN5216DW1T1G has a lifecycle status of Active.
Where can I buy MUN5216DW1T1G?
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