CatalogSend an RFQ
NJVMJD31CT4G-VF01
onsemi · DPAK
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
RoHSCompliant
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Package / case
- DPAK
- Height
- 2.51mm
- HFE Min
- 10
- Polarity
- NPN
- Schedule B
- 8541290080
- Power Dissipation
- 15W
- Number of Elements
- 1
- Max Collector Current
- 3A
- Gain Bandwidth Product
- 3MHz
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -65°C
- Emitter Base Voltage (VEBO)
- 5V
- Collector Base Voltage (VCBO)
- 100V
- Max Junction Temperature (Tj)
- 150°C
Show 2 more specificationsShow fewer specifications
- Collector Emitter Voltage (VCEO)
- 100V
- Collector Emitter Saturation Voltage
- 1.2V
Common questions about NJVMJD31CT4G-VF01
- What is NJVMJD31CT4G-VF01?
- NJVMJD31CT4G-VF01 is Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, manufactured by onsemi.
- Who manufactures NJVMJD31CT4G-VF01?
- NJVMJD31CT4G-VF01 is manufactured by onsemi.
- What package does NJVMJD31CT4G-VF01 come in?
- NJVMJD31CT4G-VF01 comes in a DPAK package.
- Is NJVMJD31CT4G-VF01 RoHS compliant?
- The RoHS status of NJVMJD31CT4G-VF01 is: Compliant.
- Where can I buy NJVMJD31CT4G-VF01?
- Send an RFQ to Makat and our AI agents source NJVMJD31CT4G-VF01 across the whole supplier network, with verified offers inside 48 hours.