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NSVMUN5332DW1T1G
onsemi · SOT-363 · Active
Bipolar Transistors - Pre-Biased Complementary Bipolar Digital Transistor (BR
LifecycleActiveRoHSCompliant
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Package / case
- SOT-363
- Packaging
- Tape & Reel
- HFE Min
- 15
- Lead Free
- Lead Free
- Schedule B
- 8541210080
- Number of Pins
- 6
- Element Configuration
- Dual
- Max Breakdown Voltage
- 50V
- Max Collector Current
- 100mA
- Max Power Dissipation
- 250mW
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Manufacturer Lifecycle Status
- Production
- Collector Emitter Voltage (VCEO)
- 250mV
Show 1 more specificationShow fewer specifications
- Collector Emitter Breakdown Voltage
- 50V
Common questions about NSVMUN5332DW1T1G
- What is NSVMUN5332DW1T1G?
- NSVMUN5332DW1T1G is Bipolar Transistors - Pre-Biased Complementary Bipolar Digital Transistor (BR, manufactured by onsemi.
- Who manufactures NSVMUN5332DW1T1G?
- NSVMUN5332DW1T1G is manufactured by onsemi.
- What package does NSVMUN5332DW1T1G come in?
- NSVMUN5332DW1T1G comes in a SOT-363 package.
- Is NSVMUN5332DW1T1G RoHS compliant?
- The RoHS status of NSVMUN5332DW1T1G is: Compliant.
- Is NSVMUN5332DW1T1G still in production?
- NSVMUN5332DW1T1G has a lifecycle status of Active.
- Where can I buy NSVMUN5332DW1T1G?
- Send an RFQ to Makat and our AI agents source NSVMUN5332DW1T1G across the whole supplier network, with verified offers inside 48 hours.