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NVHL020N120SC1

onsemi · Active

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mOhm, TO247-3L

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LifecycleActive
Manufacturer
onsemi
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Height
24.75mm
Power Dissipation
535W
Number of Channels
1
Turn On Delay Time
25ns
Turn Off Delay Time
45ns
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Drain to Source Resistance
20mO
Gate to Source Voltage (Vgs)
25V
Continuous Drain Current (ID)
103A
Manufacturer Lifecycle Status
Production
Max Junction Temperature (Tj)
175°C
Drain to Source Voltage (Vdss)
1.2kV
Drain to Source Breakdown Voltage
1.2kV

Common questions about NVHL020N120SC1

What is NVHL020N120SC1?
NVHL020N120SC1 is Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mOhm, TO247-3L, manufactured by onsemi.
Who manufactures NVHL020N120SC1?
NVHL020N120SC1 is manufactured by onsemi.
Is NVHL020N120SC1 still in production?
NVHL020N120SC1 has a lifecycle status of Active.
Where can I buy NVHL020N120SC1?
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