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NVHL020N120SC1
onsemi · Active
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mOhm, TO247-3L
LifecycleActive
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 24.75mm
- Power Dissipation
- 535W
- Number of Channels
- 1
- Turn On Delay Time
- 25ns
- Turn Off Delay Time
- 45ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 20mO
- Gate to Source Voltage (Vgs)
- 25V
- Continuous Drain Current (ID)
- 103A
- Manufacturer Lifecycle Status
- Production
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 1.2kV
- Drain to Source Breakdown Voltage
- 1.2kV
Common questions about NVHL020N120SC1
- What is NVHL020N120SC1?
- NVHL020N120SC1 is Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N-Channel, 1200 V, 20 mOhm, TO247-3L, manufactured by onsemi.
- Who manufactures NVHL020N120SC1?
- NVHL020N120SC1 is manufactured by onsemi.
- Is NVHL020N120SC1 still in production?
- NVHL020N120SC1 has a lifecycle status of Active.
- Where can I buy NVHL020N120SC1?
- Send an RFQ to Makat and our AI agents source NVHL020N120SC1 across the whole supplier network, with verified offers inside 48 hours.