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NVMFS5832NLWFT3G

onsemi · DFN · Active

Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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LifecycleActiveRoHSCompliant
Manufacturer
onsemi
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
DFN
Packaging
Tape & Reel
Fall Time
8ns
Lead Free
Lead Free
Rise Time
24ns
Rds On Max
4.2mO
Halogen Free
Halogen Free
Number of Pins
5
Input Capacitance
2.7nF
Number of Channels
1
Turn On Delay Time
13ns
Radiation Hardening
No
Turn Off Delay Time
27ns
Element Configuration
Single
Show 9 more specifications
Max Power Dissipation
3.7W
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Drain to Source Resistance
4.2mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
120A
Manufacturer Lifecycle Status
Production
Drain to Source Voltage (Vdss)
40V
Drain to Source Breakdown Voltage
40V

Common questions about NVMFS5832NLWFT3G

What is NVMFS5832NLWFT3G?
NVMFS5832NLWFT3G is Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, manufactured by onsemi.
Who manufactures NVMFS5832NLWFT3G?
NVMFS5832NLWFT3G is manufactured by onsemi.
What package does NVMFS5832NLWFT3G come in?
NVMFS5832NLWFT3G comes in a DFN package.
Is NVMFS5832NLWFT3G RoHS compliant?
The RoHS status of NVMFS5832NLWFT3G is: Compliant.
Is NVMFS5832NLWFT3G still in production?
NVMFS5832NLWFT3G has a lifecycle status of Active.
Where can I buy NVMFS5832NLWFT3G?
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