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NXH160T120L2Q2F2S1G
onsemi · Active
Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A
LifecycleActiveRoHSCompliant
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · IGBTs
- Height
- 16.9mm
- Power Dissipation
- 500W
- Turn On Delay Time
- 105ns
- Turn Off Delay Time
- 270ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -40°C
- Continuous Collector Current
- 181A
- Manufacturer Lifecycle Status
- Active
- Max Junction Temperature (Tj)
- 150°C
- Collector Emitter Voltage (VCEO)
- 1.2kV
- Collector Emitter Saturation Voltage
- 2.15V
Common questions about NXH160T120L2Q2F2S1G
- What is NXH160T120L2Q2F2S1G?
- NXH160T120L2Q2F2S1G is Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A, manufactured by onsemi.
- Who manufactures NXH160T120L2Q2F2S1G?
- NXH160T120L2Q2F2S1G is manufactured by onsemi.
- Is NXH160T120L2Q2F2S1G RoHS compliant?
- The RoHS status of NXH160T120L2Q2F2S1G is: Compliant.
- Is NXH160T120L2Q2F2S1G still in production?
- NXH160T120L2Q2F2S1G has a lifecycle status of Active.
- Where can I buy NXH160T120L2Q2F2S1G?
- Send an RFQ to Makat and our AI agents source NXH160T120L2Q2F2S1G across the whole supplier network, with verified offers inside 48 hours.