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NXH350N100H4Q2F2P1G

onsemi · Active

Transistor IGBT Module N-CH 1000V 303A ±20V Through Hole Tray

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LifecycleActive
Manufacturer
onsemi
Categories
Semiconductors · Discrete Semiconductors · Transistors · IGBTs
Height
14.39mm
Turn On Delay Time
85ns
Turn Off Delay Time
319ns
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Continuous Collector Current
303A
Manufacturer Lifecycle Status
Production
Max Junction Temperature (Tj)
175°C
Collector Emitter Voltage (VCEO)
1kV

Common questions about NXH350N100H4Q2F2P1G

What is NXH350N100H4Q2F2P1G?
NXH350N100H4Q2F2P1G is Transistor IGBT Module N-CH 1000V 303A ±20V Through Hole Tray, manufactured by onsemi.
Who manufactures NXH350N100H4Q2F2P1G?
NXH350N100H4Q2F2P1G is manufactured by onsemi.
Is NXH350N100H4Q2F2P1G still in production?
NXH350N100H4Q2F2P1G has a lifecycle status of Active.
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