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RJH60F4DPQ-A0#T0
Renesas · TO-247
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
RoHSCompliant
- Manufacturer
- Renesas
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · IGBTs
- Package / case
- TO-247
- Mounting style
- Through Hole
- Number of Pins
- 3
- Radiation Hardening
- No
- Element Configuration
- Single
- Max Collector Current
- 60A
- Max Power Dissipation
- 235.8W
- Reverse Recovery Time
- 90ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Collector Emitter Voltage (VCEO)
- 600V
- Collector Emitter Breakdown Voltage
- 600V
- Collector Emitter Saturation Voltage
- 1.7V
Common questions about RJH60F4DPQ-A0#T0
- What is RJH60F4DPQ-A0#T0?
- RJH60F4DPQ-A0#T0 is Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, manufactured by Renesas.
- Who manufactures RJH60F4DPQ-A0#T0?
- RJH60F4DPQ-A0#T0 is manufactured by Renesas.
- What package does RJH60F4DPQ-A0#T0 come in?
- RJH60F4DPQ-A0#T0 comes in a TO-247 package (Through Hole).
- Is RJH60F4DPQ-A0#T0 RoHS compliant?
- The RoHS status of RJH60F4DPQ-A0#T0 is: Compliant.
- Where can I buy RJH60F4DPQ-A0#T0?
- Send an RFQ to Makat and our AI agents source RJH60F4DPQ-A0#T0 across the whole supplier network, with verified offers inside 48 hours.