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RN1427(TE85L,F)
Toshiba · TO-236
Trans Digital BJT NPN 50V 800mA 200mW 3-Pin S-Mini T/R
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Package / case
- TO-236
- Mounting style
- Surface Mount
- Polarity
- NPN
- Schedule B
- 8541210080
- Number of Pins
- 3
- Radiation Hardening
- No
- Transition Frequency
- 300MHz
- Element Configuration
- Single
- Max Collector Current
- 800mA
- Max Power Dissipation
- 200mW
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Continuous Collector Current
- 800mA
- Collector Emitter Voltage (VCEO)
- 50V
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- Collector Emitter Breakdown Voltage
- 50V
Common questions about RN1427(TE85L,F)
- What is RN1427(TE85L,F)?
- RN1427(TE85L,F) is Trans Digital BJT NPN 50V 800mA 200mW 3-Pin S-Mini T/R, manufactured by Toshiba.
- Who manufactures RN1427(TE85L,F)?
- RN1427(TE85L,F) is manufactured by Toshiba.
- What package does RN1427(TE85L,F) come in?
- RN1427(TE85L,F) comes in a TO-236 package (Surface Mount).
- Is RN1427(TE85L,F) RoHS compliant?
- The RoHS status of RN1427(TE85L,F) is: Compliant.
- Where can I buy RN1427(TE85L,F)?
- Send an RFQ to Makat and our AI agents source RN1427(TE85L,F) across the whole supplier network, with verified offers inside 48 hours.