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SGH40N60UFDTU

onsemi · TO-3P · NRND

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel

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LifecycleNRNDRoHSCompliant
Manufacturer
onsemi
Categories
Semiconductors · Discrete Semiconductors · Transistors · IGBTs
Package / case
TO-3P
Mounting style
Through Hole
Height
23.8mm
Weight
6.401g
Lead Free
Lead Free
Number of Pins
3
Power Dissipation
160W
Turn On Delay Time
15ns
Turn Off Delay Time
65ns
Element Configuration
Single
Max Collector Current
40A
Max Power Dissipation
160W
Reverse Recovery Time
42ns
Max Operating Temperature
150°C
Show 7 more specifications
Min Operating Temperature
-55°C
Continuous Collector Current
40A
Manufacturer Lifecycle Status
NRND
Max Junction Temperature (Tj)
150°C
Collector Emitter Voltage (VCEO)
600V
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V

Common questions about SGH40N60UFDTU

What is SGH40N60UFDTU?
SGH40N60UFDTU is Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, manufactured by onsemi.
Who manufactures SGH40N60UFDTU?
SGH40N60UFDTU is manufactured by onsemi.
What package does SGH40N60UFDTU come in?
SGH40N60UFDTU comes in a TO-3P package (Through Hole).
Is SGH40N60UFDTU RoHS compliant?
The RoHS status of SGH40N60UFDTU is: Compliant.
Is SGH40N60UFDTU still in production?
SGH40N60UFDTU has a lifecycle status of NRND.
Where can I buy SGH40N60UFDTU?
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