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SI1926DL-T1-GE3
Vishay
Dual N-Channel 60 V 1.4 O 1.4 nC Surface Mount Power Mosfet - TSSOP-6
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Fall Time
- 14ns
- Rise Time
- 12ns
- Rds On Max
- 1.4O
- Schedule B
- 8541210080
- Number of Pins
- 3
- Contact Plating
- Tin
- Input Capacitance
- 18.5pF
- Turn On Delay Time
- 6.5ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 13ns
- Max Power Dissipation
- 510mW
- Max Operating Temperature
- 150°C
Show 4 more specificationsShow fewer specifications
- Min Operating Temperature
- -55°C
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 370mA
- Drain to Source Voltage (Vdss)
- 60V
Common questions about SI1926DL-T1-GE3
- What is SI1926DL-T1-GE3?
- SI1926DL-T1-GE3 is Dual N-Channel 60 V 1.4 O 1.4 nC Surface Mount Power Mosfet - TSSOP-6, manufactured by Vishay.
- Who manufactures SI1926DL-T1-GE3?
- SI1926DL-T1-GE3 is manufactured by Vishay.
- Is SI1926DL-T1-GE3 RoHS compliant?
- The RoHS status of SI1926DL-T1-GE3 is: Compliant.
- Where can I buy SI1926DL-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI1926DL-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.