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SI2301BDS-T1-GE3
Vishay · SOT-23
mall Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- SOT-23
- Mounting style
- Surface Mount
- Packaging
- Cut Tape (CT)
- Voltage
- 20 V – 20 V
- Temperature
- -55°C – 150°C (TJ)
- Width
- 1.4mm
- Height
- 1.02mm
- Length
- 3.04mm
- Weight
- 1.437803g
- Fall Time
- 40ns
- Lead Free
- Lead Free
- Rise Time
- 40ns
- REACH SVHC
- Unknown
- Rds On Max
- 100mO
Show 21 more specificationsShow fewer specifications
- Resistance
- 100MO
- Schedule B
- 8541210080
- Nominal Vgs
- 950mV
- Number of Pins
- 3
- Input Capacitance
- 375pF
- Power Dissipation
- 700mW
- Threshold Voltage
- 950mV
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 20ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 30ns
- Element Configuration
- Single
- Max Power Dissipation
- 700mW
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 100mO
- Gate to Source Voltage (Vgs)
- 8V
- Continuous Drain Current (ID)
- 2.2A
- Drain to Source Voltage (Vdss)
- 20V
- Drain to Source Breakdown Voltage
- 20V
Common questions about SI2301BDS-T1-GE3
- What is SI2301BDS-T1-GE3?
- SI2301BDS-T1-GE3 is mall Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, manufactured by Vishay.
- Who manufactures SI2301BDS-T1-GE3?
- SI2301BDS-T1-GE3 is manufactured by Vishay.
- What package does SI2301BDS-T1-GE3 come in?
- SI2301BDS-T1-GE3 comes in a SOT-23 package (Surface Mount).
- Is SI2301BDS-T1-GE3 RoHS compliant?
- The RoHS status of SI2301BDS-T1-GE3 is: Compliant.
- Where can I buy SI2301BDS-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI2301BDS-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.