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SI2319DS-T1-GE3

Vishay · SOT-23

P-Channel 40 V 82 mO 17 nC Surface Mount Power Mosfet - SOT-23

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
SOT-23
Mounting style
Surface Mount
Packaging
Tape & Reel
Voltage
40 V – 40 V
Temperature
-55°C – 150°C (TJ)
Weight
1.437803g
Fall Time
25ns
Rise Time
15ns
REACH SVHC
Unknown
Rds On Max
82mO
Schedule B
8541290080
Nominal Vgs
3V
Number of Pins
3
Input Capacitance
470pF
Show 15 more specifications
Power Dissipation
750mW
Threshold Voltage
3V
Number of Channels
1
Number of Elements
1
Turn On Delay Time
7ns
Radiation Hardening
No
Turn Off Delay Time
25ns
Element Configuration
Single
Max Power Dissipation
750mW
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
82mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
2.3A
Drain to Source Voltage (Vdss)
40V

Common questions about SI2319DS-T1-GE3

What is SI2319DS-T1-GE3?
SI2319DS-T1-GE3 is P-Channel 40 V 82 mO 17 nC Surface Mount Power Mosfet - SOT-23, manufactured by Vishay.
Who manufactures SI2319DS-T1-GE3?
SI2319DS-T1-GE3 is manufactured by Vishay.
What package does SI2319DS-T1-GE3 come in?
SI2319DS-T1-GE3 comes in a SOT-23 package (Surface Mount).
Is SI2319DS-T1-GE3 RoHS compliant?
The RoHS status of SI2319DS-T1-GE3 is: Compliant.
Where can I buy SI2319DS-T1-GE3?
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