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Catalog

SI2323DS-T1-GE3

Vishay · SOT-23

ingle P-Channel 20 V 0.039 O 19 nC Surface Mount Power Mosfet - SOT-23

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
SOT-23
Mounting style
Surface Mount
Width
1.4mm
Height
1.02mm
Length
3.04mm
Weight
1.437803g
Fall Time
43ns
Lead Free
Lead Free
Rise Time
43ns
REACH SVHC
Unknown
Rds On Max
39mO
Resistance
39mO
Schedule B
8541290080
Nominal Vgs
1V
Show 19 more specifications
Number of Pins
3
Input Capacitance
1.02nF
Power Dissipation
750mW
Threshold Voltage
1V
Number of Channels
1
Number of Elements
1
Turn On Delay Time
25ns
Radiation Hardening
No
Turn Off Delay Time
71ns
Element Configuration
Single
Max Power Dissipation
750mW
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
31mO
Gate to Source Voltage (Vgs)
8V
Continuous Drain Current (ID)
3.7A
Max Junction Temperature (Tj)
150°C
Drain to Source Voltage (Vdss)
20V
Drain to Source Breakdown Voltage
20V

Common questions about SI2323DS-T1-GE3

What is SI2323DS-T1-GE3?
SI2323DS-T1-GE3 is ingle P-Channel 20 V 0.039 O 19 nC Surface Mount Power Mosfet - SOT-23, manufactured by Vishay.
Who manufactures SI2323DS-T1-GE3?
SI2323DS-T1-GE3 is manufactured by Vishay.
What package does SI2323DS-T1-GE3 come in?
SI2323DS-T1-GE3 comes in a SOT-23 package (Surface Mount).
Is SI2323DS-T1-GE3 RoHS compliant?
The RoHS status of SI2323DS-T1-GE3 is: Compliant.
Where can I buy SI2323DS-T1-GE3?
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