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SI2333DS-T1-GE3
Vishay · SOT-23
P Channel Mosfet; Transistor Polarity: p Channel; Drain Source Voltage Vds: 12V
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- SOT-23
- Mounting style
- Surface Mount
- Weight
- 1.437803g
- Fall Time
- 60ns
- REACH SVHC
- Unknown
- Rds On Max
- 32mO
- Nominal Vgs
- 1V
- Number of Pins
- 3
- Input Capacitance
- 1.1nF
- Threshold Voltage
- 1V
- Number of Channels
- 1
- Turn On Delay Time
- 25ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 72ns
Show 8 more specificationsShow fewer specifications
- Element Configuration
- Single
- Max Power Dissipation
- 750mW
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 32mO
- Gate to Source Voltage (Vgs)
- 8V
- Continuous Drain Current (ID)
- 4.1A
- Drain to Source Voltage (Vdss)
- 12V
Common questions about SI2333DS-T1-GE3
- What is SI2333DS-T1-GE3?
- SI2333DS-T1-GE3 is P Channel Mosfet; Transistor Polarity: p Channel; Drain Source Voltage Vds: 12V, manufactured by Vishay.
- Who manufactures SI2333DS-T1-GE3?
- SI2333DS-T1-GE3 is manufactured by Vishay.
- What package does SI2333DS-T1-GE3 come in?
- SI2333DS-T1-GE3 comes in a SOT-23 package (Surface Mount).
- Is SI2333DS-T1-GE3 RoHS compliant?
- The RoHS status of SI2333DS-T1-GE3 is: Compliant.
- Where can I buy SI2333DS-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI2333DS-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.