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SI3410DV-T1-GE3

Vishay · TSOP

Si3410DV Series 30 V 19.5 mOhm Surface Mount N-Channel MOSFET - TSOP-6

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TSOP
Mounting style
Surface Mount
Packaging
Tape & Reel
Weight
19.986414mg
Fall Time
9ns
Lead Free
Lead Free
Rise Time
14ns
REACH SVHC
Unknown
Rds On Max
19.5mO
Schedule B
8541290080
Nominal Vgs
3V
Number of Pins
6
Input Capacitance
1.295nF
Power Dissipation
2W
Show 14 more specifications
Threshold Voltage
3V
Number of Channels
1
Number of Elements
1
Turn On Delay Time
21ns
Radiation Hardening
No
Turn Off Delay Time
20ns
Element Configuration
Single
Max Power Dissipation
2W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
19.5mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
30V

Common questions about SI3410DV-T1-GE3

What is SI3410DV-T1-GE3?
SI3410DV-T1-GE3 is Si3410DV Series 30 V 19.5 mOhm Surface Mount N-Channel MOSFET - TSOP-6, manufactured by Vishay.
Who manufactures SI3410DV-T1-GE3?
SI3410DV-T1-GE3 is manufactured by Vishay.
What package does SI3410DV-T1-GE3 come in?
SI3410DV-T1-GE3 comes in a TSOP package (Surface Mount).
Is SI3410DV-T1-GE3 RoHS compliant?
The RoHS status of SI3410DV-T1-GE3 is: Compliant.
Where can I buy SI3410DV-T1-GE3?
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