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SI3443BDV-T1-GE3
Vishay · TSOP
P-CHANNEL 2.5-V (G-S) MOSFET
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TSOP
- Mounting style
- Surface Mount
- Weight
- 19.986414mg
- Fall Time
- 25ns
- Rise Time
- 35ns
- Rds On Max
- 60mO
- Number of Pins
- 6
- Number of Channels
- 1
- Turn On Delay Time
- 22ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 45ns
- Element Configuration
- Single
- Max Power Dissipation
- 1.1W
- Max Operating Temperature
- 150°C
Show 5 more specificationsShow fewer specifications
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 60mO
- Gate to Source Voltage (Vgs)
- 12V
- Continuous Drain Current (ID)
- 3.6A
- Drain to Source Voltage (Vdss)
- 20V
Common questions about SI3443BDV-T1-GE3
- What is SI3443BDV-T1-GE3?
- SI3443BDV-T1-GE3 is P-CHANNEL 2.5-V (G-S) MOSFET, manufactured by Vishay.
- Who manufactures SI3443BDV-T1-GE3?
- SI3443BDV-T1-GE3 is manufactured by Vishay.
- What package does SI3443BDV-T1-GE3 come in?
- SI3443BDV-T1-GE3 comes in a TSOP package (Surface Mount).
- Is SI3443BDV-T1-GE3 RoHS compliant?
- The RoHS status of SI3443BDV-T1-GE3 is: Compliant.
- Where can I buy SI3443BDV-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI3443BDV-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.