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SI3590DV-T1-GE3
Vishay · TSOP
N- and P-Channel 30-V (D-S) MOSFET
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TSOP
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Height
- 1.1mm
- Weight
- 19.986414mg
- Lead Free
- Lead Free
- REACH SVHC
- No
- Rds On Max
- 77mO
- Schedule B
- 8541210080
- Nominal Vgs
- 1.5V
- Number of Pins
- 6
- Power Dissipation
- 830mW
- Threshold Voltage
- 1.5V
- Number of Channels
- 2
Show 12 more specificationsShow fewer specifications
- Number of Elements
- 2
- Turn On Delay Time
- 5ns
- Radiation Hardening
- No
- Max Power Dissipation
- 830mW
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 135mO
- Gate to Source Voltage (Vgs)
- 12V
- Continuous Drain Current (ID)
- 2.5A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SI3590DV-T1-GE3
- What is SI3590DV-T1-GE3?
- SI3590DV-T1-GE3 is N- and P-Channel 30-V (D-S) MOSFET, manufactured by Vishay.
- Who manufactures SI3590DV-T1-GE3?
- SI3590DV-T1-GE3 is manufactured by Vishay.
- What package does SI3590DV-T1-GE3 come in?
- SI3590DV-T1-GE3 comes in a TSOP package (Surface Mount).
- Is SI3590DV-T1-GE3 RoHS compliant?
- The RoHS status of SI3590DV-T1-GE3 is: Compliant.
- Where can I buy SI3590DV-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI3590DV-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.