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Catalog

SI4800BDY-T1-GE3

Vishay · SOIC

30V 6.5A 18.5m´Î@10V9A 1.3W 1.8V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
SOIC
Mounting style
Surface Mount
Width
4mm
Height
1.55mm
Length
5mm
Weight
186.993455mg
Fall Time
12ns
Lead Free
Lead Free
Rise Time
12ns
Rds On Max
18.5mO
Resistance
18.5mO
Schedule B
8541290080
Nominal Vgs
25V
Number of Pins
8
Show 15 more specifications
Power Dissipation
1.3W
Number of Channels
1
Number of Elements
1
Turn On Delay Time
7ns
Radiation Hardening
No
Turn Off Delay Time
32ns
Element Configuration
Single
Max Power Dissipation
1.3W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
18.5mO
Gate to Source Voltage (Vgs)
25V
Continuous Drain Current (ID)
6.5A
Drain to Source Voltage (Vdss)
30V
Drain to Source Breakdown Voltage
30V

Common questions about SI4800BDY-T1-GE3

What is SI4800BDY-T1-GE3?
SI4800BDY-T1-GE3 is 30V 6.5A 18.5m´Î@10V9A 1.3W 1.8V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS, manufactured by Vishay.
Who manufactures SI4800BDY-T1-GE3?
SI4800BDY-T1-GE3 is manufactured by Vishay.
What package does SI4800BDY-T1-GE3 come in?
SI4800BDY-T1-GE3 comes in a SOIC package (Surface Mount).
Is SI4800BDY-T1-GE3 RoHS compliant?
The RoHS status of SI4800BDY-T1-GE3 is: Compliant.
Where can I buy SI4800BDY-T1-GE3?
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