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SI4936BDY-T1-GE3
Vishay · SOIC
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- SOIC
- Mounting style
- Surface Mount
- Weight
- 506.605978mg
- Fall Time
- 10ns
- Rise Time
- 25ns
- REACH SVHC
- Unknown
- Rds On Max
- 35mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Input Capacitance
- 530pF
- Threshold Voltage
- 3V
- Number of Channels
- 2
- Turn On Delay Time
- 5ns
- Radiation Hardening
- No
Show 10 more specificationsShow fewer specifications
- Turn Off Delay Time
- 12ns
- Element Configuration
- Dual
- Max Power Dissipation
- 2.8W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 35mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 6.9A
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SI4936BDY-T1-GE3
- What is SI4936BDY-T1-GE3?
- SI4936BDY-T1-GE3 is Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R, manufactured by Vishay.
- Who manufactures SI4936BDY-T1-GE3?
- SI4936BDY-T1-GE3 is manufactured by Vishay.
- What package does SI4936BDY-T1-GE3 come in?
- SI4936BDY-T1-GE3 comes in a SOIC package (Surface Mount).
- Is SI4936BDY-T1-GE3 RoHS compliant?
- The RoHS status of SI4936BDY-T1-GE3 is: Compliant.
- Where can I buy SI4936BDY-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI4936BDY-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.