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SI4963BDY-T1-GE3
Vishay · SO
MOSFET 2P-CH 20V 4.9A 8SOIC
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- SO
- Mounting style
- Surface Mount
- Width
- 4mm
- Height
- 1.55mm
- Length
- 5mm
- Weight
- 186.993455mg
- Fall Time
- 55ns
- Rise Time
- 40ns
- Rds On Max
- 32mO
- Number of Pins
- 8
- Power Dissipation
- 1.1W
- Number of Channels
- 2
- Number of Elements
- 2
- Turn On Delay Time
- 30ns
Show 10 more specificationsShow fewer specifications
- Radiation Hardening
- No
- Turn Off Delay Time
- 80ns
- Element Configuration
- Dual
- Max Power Dissipation
- 1.1W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 32mO
- Gate to Source Voltage (Vgs)
- 12V
- Continuous Drain Current (ID)
- 4.9A
- Drain to Source Voltage (Vdss)
- 20V
Common questions about SI4963BDY-T1-GE3
- What is SI4963BDY-T1-GE3?
- SI4963BDY-T1-GE3 is MOSFET 2P-CH 20V 4.9A 8SOIC, manufactured by Vishay.
- Who manufactures SI4963BDY-T1-GE3?
- SI4963BDY-T1-GE3 is manufactured by Vishay.
- What package does SI4963BDY-T1-GE3 come in?
- SI4963BDY-T1-GE3 comes in a SO package (Surface Mount).
- Is SI4963BDY-T1-GE3 RoHS compliant?
- The RoHS status of SI4963BDY-T1-GE3 is: Compliant.
- Where can I buy SI4963BDY-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI4963BDY-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.