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SI5419DU-T1-GE3

Vishay

Si5419DU Series P-Channel 30 V 20 mOhms SMT Power Mosfet - PowerPAK-ChipFET-8

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Mounting style
Surface Mount
Width
1.9mm
Height
750µm
Length
3mm
Fall Time
12ns
Lead Free
Lead Free
Rise Time
10ns
Rds On Max
20mO
Resistance
20MO
Schedule B
8541290080
Number of Pins
8
Input Capacitance
1.4nF
Power Dissipation
3.1W
Number of Channels
1
Show 12 more specifications
Number of Elements
1
Turn On Delay Time
10ns
Turn Off Delay Time
40ns
Element Configuration
Single
Max Power Dissipation
31W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
20mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
9.9A
Drain to Source Voltage (Vdss)
30V
Drain to Source Breakdown Voltage
30V

Common questions about SI5419DU-T1-GE3

What is SI5419DU-T1-GE3?
SI5419DU-T1-GE3 is Si5419DU Series P-Channel 30 V 20 mOhms SMT Power Mosfet - PowerPAK-ChipFET-8, manufactured by Vishay.
Who manufactures SI5419DU-T1-GE3?
SI5419DU-T1-GE3 is manufactured by Vishay.
Is SI5419DU-T1-GE3 RoHS compliant?
The RoHS status of SI5419DU-T1-GE3 is: Compliant.
Where can I buy SI5419DU-T1-GE3?
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