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SI7190DP-T1-GE3

Vishay · SOIC

SI7190 Series N-Channel 250 V 18.4 A 118 mOhms Mosfet - PowerPak SO-8

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RoHSCompliant
Manufacturer
Vishay
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
SOIC
Mounting style
Surface Mount
Packaging
Tape & Reel
Width
5.89mm
Height
1.04mm
Length
4.9mm
Weight
506.605978mg
Fall Time
9ns
Lead Free
Lead Free
Rise Time
12ns
REACH SVHC
Unknown
Rds On Max
118mO
Resistance
118MO
Schedule B
8541290080
Show 17 more specifications
Number of Pins
8
Contact Plating
Tin
Input Capacitance
2.214nF
Power Dissipation
5.4W
Threshold Voltage
2V
Number of Channels
1
Number of Elements
1
Turn On Delay Time
13ns
Radiation Hardening
No
Turn Off Delay Time
28ns
Max Power Dissipation
96W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
118mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
4.4A
Drain to Source Voltage (Vdss)
250V

Common questions about SI7190DP-T1-GE3

What is SI7190DP-T1-GE3?
SI7190DP-T1-GE3 is SI7190 Series N-Channel 250 V 18.4 A 118 mOhms Mosfet - PowerPak SO-8, manufactured by Vishay.
Who manufactures SI7190DP-T1-GE3?
SI7190DP-T1-GE3 is manufactured by Vishay.
What package does SI7190DP-T1-GE3 come in?
SI7190DP-T1-GE3 comes in a SOIC package (Surface Mount).
Is SI7190DP-T1-GE3 RoHS compliant?
The RoHS status of SI7190DP-T1-GE3 is: Compliant.
Where can I buy SI7190DP-T1-GE3?
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