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SI7434DP-T1-GE3
Vishay
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:3.8A; On Resistance, Rds(on):0.162ohm; Rds(on) Test Voltage, Vgs:6V ;RoHS Compliant: Yes
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Width
- 5.89mm
- Height
- 1.04mm
- Length
- 4.9mm
- Weight
- 506.605978mg
- Fall Time
- 23ns
- Rise Time
- 23ns
- REACH SVHC
- Unknown
- Rds On Max
- 155mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Power Dissipation
- 1.9W
- Threshold Voltage
- 4V
- Number of Channels
- 1
Show 13 more specificationsShow fewer specifications
- Number of Elements
- 1
- Turn On Delay Time
- 16ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 47ns
- Element Configuration
- Single
- Max Power Dissipation
- 1.9W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 155mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 2.3A
- Drain to Source Voltage (Vdss)
- 250V
- Drain to Source Breakdown Voltage
- 250V
Common questions about SI7434DP-T1-GE3
- What is SI7434DP-T1-GE3?
- SI7434DP-T1-GE3 is COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:3.8A; On Resistance, Rds(on):0.162ohm; Rds(on) Test Voltage, Vgs:6V ;RoHS Compliant: Yes, manufactured by Vishay.
- Who manufactures SI7434DP-T1-GE3?
- SI7434DP-T1-GE3 is manufactured by Vishay.
- Is SI7434DP-T1-GE3 RoHS compliant?
- The RoHS status of SI7434DP-T1-GE3 is: Compliant.
- Where can I buy SI7434DP-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI7434DP-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.