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SI7623DN-T1-GE3
Vishay
MOSFET -20V 3.8MOHM@10V 35A P-CH G-III
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Lead Free
- Lead Free
- REACH SVHC
- No
- Rds On Max
- 3.8mO
- Schedule B
- 8541290080
- Number of Pins
- 8
- Input Capacitance
- 5.46nF
- Power Dissipation
- 3.7W
- Threshold Voltage
- 400mV
- Number of Channels
- 1
- Number of Elements
- 1
- Radiation Hardening
- No
- Element Configuration
- Single
- Max Power Dissipation
- 52W
Show 7 more specificationsShow fewer specifications
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 3.8mO
- Gate to Source Voltage (Vgs)
- 12V
- Continuous Drain Current (ID)
- 35A
- Drain to Source Voltage (Vdss)
- 20V
- Drain to Source Breakdown Voltage
- 20V
Common questions about SI7623DN-T1-GE3
- What is SI7623DN-T1-GE3?
- SI7623DN-T1-GE3 is MOSFET -20V 3.8MOHM@10V 35A P-CH G-III, manufactured by Vishay.
- Who manufactures SI7623DN-T1-GE3?
- SI7623DN-T1-GE3 is manufactured by Vishay.
- Is SI7623DN-T1-GE3 RoHS compliant?
- The RoHS status of SI7623DN-T1-GE3 is: Compliant.
- Where can I buy SI7623DN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI7623DN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.