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SI7686DP-T1-GE3
Vishay · SOIC
N CHANNEL MOSFET, 30V, 35A, SOIC
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- SOIC
- Mounting style
- Surface Mount
- Width
- 5.89mm
- Height
- 1.04mm
- Length
- 4.9mm
- Weight
- 506.605978mg
- Fall Time
- 8ns
- Rise Time
- 16ns
- REACH SVHC
- Unknown
- Rds On Max
- 9.5mO
- Number of Pins
- 8
- Input Capacitance
- 1.22nF
- Power Dissipation
- 5W
- Threshold Voltage
- 3V
Show 14 more specificationsShow fewer specifications
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 13ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 23ns
- Element Configuration
- Single
- Max Power Dissipation
- 5W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 9.5mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 17.9A
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SI7686DP-T1-GE3
- What is SI7686DP-T1-GE3?
- SI7686DP-T1-GE3 is N CHANNEL MOSFET, 30V, 35A, SOIC, manufactured by Vishay.
- Who manufactures SI7686DP-T1-GE3?
- SI7686DP-T1-GE3 is manufactured by Vishay.
- What package does SI7686DP-T1-GE3 come in?
- SI7686DP-T1-GE3 comes in a SOIC package (Surface Mount).
- Is SI7686DP-T1-GE3 RoHS compliant?
- The RoHS status of SI7686DP-T1-GE3 is: Compliant.
- Where can I buy SI7686DP-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI7686DP-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.