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SI7862ADP-T1-GE3
Vishay
MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Weight
- 506.605978mg
- Fall Time
- 50ns
- Rise Time
- 38ns
- Rds On Max
- 3mO
- Input Capacitance
- 7.34nF
- Number of Channels
- 1
- Turn On Delay Time
- 42ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 120ns
- Element Configuration
- Single
- Max Power Dissipation
- 1.9W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
Show 5 more specificationsShow fewer specifications
- Drain to Source Resistance
- 3mO
- Gate to Source Voltage (Vgs)
- 8V
- Continuous Drain Current (ID)
- 18A
- Drain to Source Voltage (Vdss)
- 16V
- Drain to Source Breakdown Voltage
- 16V
Common questions about SI7862ADP-T1-GE3
- What is SI7862ADP-T1-GE3?
- SI7862ADP-T1-GE3 is MOSFET 16V 29A 5.4W 3.0mohm @ 4.5V, manufactured by Vishay.
- Who manufactures SI7862ADP-T1-GE3?
- SI7862ADP-T1-GE3 is manufactured by Vishay.
- Is SI7862ADP-T1-GE3 RoHS compliant?
- The RoHS status of SI7862ADP-T1-GE3 is: Compliant.
- Where can I buy SI7862ADP-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI7862ADP-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.