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SI7923DN-T1-GE3
Vishay
Dual P-Ch 30 V 47 mOhm Surface Mount TrenchFET® Power Mosfet - PowerPAK® 1212-8
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Fall Time
- 28ns
- Rise Time
- 12ns
- REACH SVHC
- Unknown
- Rds On Max
- 47mO
- Number of Pins
- 8
- Threshold Voltage
- 1V
- Number of Channels
- 2
- Turn On Delay Time
- 10ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 38ns
- Element Configuration
- Dual
- Max Power Dissipation
- 1.3W
Show 7 more specificationsShow fewer specifications
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 47mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 4.3A
- Drain to Source Voltage (Vdss)
- 30V
- Drain to Source Breakdown Voltage
- 30V
Common questions about SI7923DN-T1-GE3
- What is SI7923DN-T1-GE3?
- SI7923DN-T1-GE3 is Dual P-Ch 30 V 47 mOhm Surface Mount TrenchFET® Power Mosfet - PowerPAK® 1212-8, manufactured by Vishay.
- Who manufactures SI7923DN-T1-GE3?
- SI7923DN-T1-GE3 is manufactured by Vishay.
- Is SI7923DN-T1-GE3 RoHS compliant?
- The RoHS status of SI7923DN-T1-GE3 is: Compliant.
- Where can I buy SI7923DN-T1-GE3?
- Send an RFQ to Makat and our AI agents source SI7923DN-T1-GE3 across the whole supplier network, with verified offers inside 48 hours.