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SI8429DB-T1-E1
Vishay
rans MOSFET P-CH Si 8V 11.7A 4-Pin Micro Foot T/R
RoHSCompliant
- Manufacturer
- Vishay
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Width
- 1.6mm
- Height
- 360µm
- Length
- 1.6mm
- Fall Time
- 155ns
- Lead Free
- Lead Free
- Rise Time
- 25ns
- REACH SVHC
- Unknown
- Rds On Max
- 35mO
- Resistance
- 35mO
- Schedule B
- 8541290080
- Number of Pins
- 4
- Contact Plating
- Copper, Silver, Tin
- Input Capacitance
- 1.64nF
Show 15 more specificationsShow fewer specifications
- Power Dissipation
- 2.77W
- Threshold Voltage
- 600mV
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 12ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 260ns
- Max Power Dissipation
- 2.77W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 43mO
- Gate to Source Voltage (Vgs)
- 5V
- Continuous Drain Current (ID)
- 7.8A
- Drain to Source Voltage (Vdss)
- 8V
- Drain to Source Breakdown Voltage
- 8V
Common questions about SI8429DB-T1-E1
- What is SI8429DB-T1-E1?
- SI8429DB-T1-E1 is rans MOSFET P-CH Si 8V 11.7A 4-Pin Micro Foot T/R, manufactured by Vishay.
- Who manufactures SI8429DB-T1-E1?
- SI8429DB-T1-E1 is manufactured by Vishay.
- Is SI8429DB-T1-E1 RoHS compliant?
- The RoHS status of SI8429DB-T1-E1 is: Compliant.
- Where can I buy SI8429DB-T1-E1?
- Send an RFQ to Makat and our AI agents source SI8429DB-T1-E1 across the whole supplier network, with verified offers inside 48 hours.