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SI8481DB-T1-E1
Vishay
MOSFET P-CH 20V 9.7A 4MICRO FOOT
RoHSNon-Compliant
- Manufacturer
- Vishay
- Height
- 600µm
- Power Dissipation
- 1.1W
- Number of Channels
- 1
- Turn On Delay Time
- 16ns
- Turn Off Delay Time
- 300ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 17mO
- Gate to Source Voltage (Vgs)
- 8V
- Continuous Drain Current (ID)
- 6.2A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 20V
- Drain to Source Breakdown Voltage
- 20V